Quantum dot solar cell

A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the absorbing photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are tunable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s). This property makes quantum dots attractive for multi-junction solar cells, where a variety of materials are used to improve efficiency by harvesting multiple portions of the solar spectrum. A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the absorbing photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are tunable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s). This property makes quantum dots attractive for multi-junction solar cells, where a variety of materials are used to improve efficiency by harvesting multiple portions of the solar spectrum. As of 2019, efficiency exceeds 16.5%. In a conventional solar cell, light is absorbed by a semiconductor, producing an electron-hole (e-h) pair; the pair may be bound and is referred to as an exciton. This pair is separated by an internal electrochemical potential (present in p-n junctions or Schottky diodes) and the resulting flow of electrons and holes creates electric current. The internal electrochemical potential is created by doping one part of semiconductor interface with atoms that act as electron donors (n-type doping) and another with electron acceptors (p-type doping) that results in a p-n junction. Generation of an e-h pair requires that the photons have energy exceeding the bandgap of the material. Effectively, photons with energies lower than the bandgap do not get absorbed, while those that are higher can quickly (within about 10−13 s) thermalize to the band edges, reducing output. The former limitation reduces current, while the thermalization reduces the voltage. As a result, semiconductor cells suffer a trade-off between voltage and current (which can be in part alleviated by using multiple junction implementations). The detailed balance calculation shows that this efficiency can not exceed 33% if one uses a single material with an ideal bandgap of 1.34 eV for a solar cell. The band gap (1.34 eV) of an ideal single-junction cell is close to that of silicon (1.1 eV), one of the many reasons that silicon dominates the market. However, silicon's efficiency is limited to about 30% (Shockley–Queisser limit). It is possible to improve on a single-junction cell by vertically stacking cells with different bandgaps – termed a 'tandem' or 'multi-junction' approach. The same analysis shows that a two layer cell should have one layer tuned to 1.64 eV and the other to 0.94 eV, providing a theoretical performance of 44%. A three-layer cell should be tuned to 1.83, 1.16 and 0.71 eV, with an efficiency of 48%. An 'infinity-layer' cell would have a theoretical efficiency of 86%, with other thermodynamic loss mechanisms accounting for the rest. Traditional (crystalline) silicon preparation methods do not lend themselves to this approach due to lack of bandgap tunability. Thin-films of amorphous silicon, which due to a relaxed requirement in crystal momentum preservation can achieve direct bandgaps and intermixing of carbon, can tune the bandgap, but other issues have prevented these from matching the performance of traditional cells. Most tandem-cell structures are based on higher performance semiconductors, notably indium gallium arsenide (InGaAs). Three-layer InGaAs/GaAs/InGaP cells (bandgaps 0.94/1.42/1.89 eV) hold the efficiency record of 42.3% for experimental examples. However, the QDSCs suffer from weak absorption and the contribution of the light absorption at room temperature is marginal. This can be addressed by utilizing multibranched Au nanostars. Quantum dots are semiconducting particles that have been reduced below the size of the Exciton Bohr radius and due to quantum mechanics considerations, the electron energies that can exist within them become finite, much alike energies in an atom. Quantum dots have been referred to as 'artificial atoms'. These energy levels are tuneable by changing their size, which in turn defines the bandgap. The dots can be grown over a range of sizes, allowing them to express a variety of bandgaps without changing the underlying material or construction techniques. In typical wet chemistry preparations, the tuning is accomplished by varying the synthesis duration or temperature. The ability to tune the bandgap makes quantum dots desirable for solar cells. For the sun’s photon distribution spectrum, the Shockley-Queisser limit indicates that the maximum solar conversion efficiency occurs in a material with a band gap of 1.34 eV. However, materials with lower band gaps will be better suited to generate electricity from lower-energy photons (and vice versa). Single junction implementations using lead sulfide (PbS) colloidal quantum dots (CQD) have bandgaps that can be tuned into the far infrared, frequencies that are typically difficult to achieve with traditional solar cells. Half of the solar energy reaching the Earth is in the infrared, most in the near infrared region. A quantum dot solar cell makes infrared energy as accessible as any other. Moreover, CQD offer easy synthesis and preparation. While suspended in a colloidal liquid form they can be easily handled throughout production, with a fumehood as the most complex equipment needed. CQD are typically synthesized in small batches, but can be mass-produced. The dots can be distributed on a substrate by spin coating, either by hand or in an automated process. Large-scale production could use spray-on or roll-printing systems, dramatically reducing module construction costs.