Epitaxial growth of γ-Al{sub 2}O{sub 3} on Ti{sub 2}AlC(0001) by reactive high-power impulse magnetron sputtering

Al{sub 2}O{sub 3} was deposited by reactive high-power impulse magnetron sputtering at 600 °C onto pre-deposited Ti{sub 2}AlC(0001) thin films on α-Al{sub 2}O{sub 3}(0001) substrates. The Al{sub 2}O{sub 3} was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial γ-Al{sub 2}O{sub 3}(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of γ-Al{sub 2}O{sub 3} on Ti{sub 2}AlC(0001) open prospects for growth of crystalline alumina as protective coatings on Ti{sub 2}AlC and related nanolaminated materials. The crystallographic orientation relationships are γ-Al{sub 2}O{sub 3}(111)//Ti{sub 2}AlC(0001) (out-of-plane) and γ- Al {sub 2}O{sub 3}(22{sup ¯}0)// Ti {sub 2} AlC (112{sup ¯}0) (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 °C resulted in partial decomposition of the Ti{sub 2}AlC by depletion of Al and diffusion into and through the γ-Al{sub 2}O{sub 3} layer.