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Effect of Process Induced Strain in 35 nm FDSOI Devices with Ultra-Thin Silicon Channels
Effect of Process Induced Strain in 35 nm FDSOI Devices with Ultra-Thin Silicon Channels
2005
C. Gallon
C. Fenouillet-Beranger
S. Denorme
F. Bœuf
Vincent Fiori
Nicolas Loubet
T. Kormann
M. Broekaart
P. Gouraud
F. Leverd
G. Imbert
C. Chaton
C. Laviron
L. Gabette
F. Vigilant
Philippe Garnier
H. Bernard
A. Tarnowka
A. Vandooren
R. Pantel
F. Pionnier
S. Jullian
S. Cristoloveanu
T. Skotnicki
Keywords:
Materials science
Nanotechnology
Analytical chemistry
Silicon
Strain (chemistry)
Correction
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