Tungsten sputtering target and method for producing same

Provided is a sputtering target, characterized by containing 0.01-0.5 wt% of Ag, with the remainder being W and unavoidable impurities. The purpose of the present invention is to provide a sputtering target with which it is possible to form a film of relatively low specific resistance by sputtering, the film being endowed with good uniformity and having excellent characteristics, particularly when forming thin films for semiconductor devices; and a method for producing the sputtering target.