Method for preparing metal nano-crystal thin film

The present invention discloses a method for preparing metal nano crystal thin film, the method comprising: A metal thin film layer deposited on the insulating substrate; B in an inert gas rapid annealing temperature, formation of thin film separated nanocrystalline metals... Using a metal film prepared nanocrystals of the present invention has good storage characteristics and charge trapping, compatible with conventional silicon planar process, is very suitable for high performance suitable for making a semiconductor memory device. Using the method of producing metal nanocrystalline film of the present invention provides greatly simplifies the manufacturing process and reduce manufacturing costs, improve production efficiency and process stability, is very conducive to wide applications of the present invention.