Using a remote plasma source for n-type Plasma Doping chamber cleans

The Applied Materials VSE Plasma Doping (PLAD) tool consists of an inductively coupled RF ion source and a backside-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. During n-type doping operations using AsH 3 or PH 3 gases, the chamber components are heavily coated with residue. An in-situ NF 3 process can clean the chamber, but this is a long process, utilizing significant quantities of NF 3 . Over-etching of some areas can create aluminum fluoride particles, thereby necessitating opening the chamber for a full wipe-down, which extends the cleaning process even more.