Performance benchmarking of p-type In 0.65 Ga 0.35 As/GaAs 0.4 Sb 0.6 and Ge/Ge 0.93 Sn 0.07 hetero-junction tunnel FETs

We experimentally demonstrate and benchmark the performance of p-channel TFETs (PTFETs) comparing Group III-V (In 0.65 Ga 0.35 As/GaAs 0.4 SW 0.6 ) against Group IV (Ge/Ge 0.93 Sn 0.07 ) semiconductor hetero-junctions. This is enabled via gate stack engineering with extremely scaled dielectrics achieving the highest accumulation capacitance density (≥3μF/cm 2 ) on both GaAs 0.4 Sb 0.6 and Ge 0.88 Sn 0.12 channels, respectively. Temperature and electric field dependent I-V measurements coupled with first-principles density functional theory (DFT) based band-structure calculations and analytical modeling based on modified Shockley-Read-Hall formalism, are used to quantify contributions to carrier transport from band-to-band tunneling and trap-assisted tunneling (TAT). GeSn based PTFETs are found to outperform In 0.65 Ga 0.35 As/GaAs 0.4 Sb 0.6 PTFETs benefiting from band-gap engineering (higher I on ) and reduced phonon assisted TAT current (lower D it ).