Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)

In article number 1900207, Suresh Sundaram, Abdallah Ougazzaden, and co‐workers demonstrate self‐organized GaN nanorods formation on layered h‐BN templates by van der Waals epitaxial growth. This approach is used to grow III‐N nanowire light‐emitting diodes. In addition, this approach also mitigates transfer processes and scaling issues seen with other 2D materials, since both the 1D (GaN nanorods) and 2D (h‐BN) are grown at the wafer‐scale and in one epitaxial growth run.