ELECTRIC PROPERTIES OF ALLOYS IN THE SYSTEM CUINSE2-IN2SE3 (DOSLIDZHENNYA ELEKTRYCHNYKH VLASTYVOSTEI SPLAVIV U SYSTEMI CUINSE2-IN2SE3,

Abstract : Elec. conds., thermal emfs., and Hall coeffs. of semiconducting alloys in the system CuInSe2-In2Se3 were measured to det. the dependence of thermal and optical forbidden zones, concns. of carriers, and the mobilities of electrons and holes on the compn. of the alloy. In a certain concn. range the alloys in this system are solid solns. having diamond-type crystal lattice. All alloys in this system which have a diamond crystal lattice are semiconductors. The compn. dependence curve of the width of the forbidden zone (delta E vs. In2Se3 concn.) passes through a min. in a concn. region which corresponds to the transition from the chalcopyrite to the sphalerite crystal lattice. The presence of the min. is attributed to the ordering effect in the cation sublattice of the alloys. Mechanisms of suppression of the elec. activity of impurities in semiconductors with stoichiometric lattice defects in the cation sublattice are discussed. The suppression starts in the presence of a small amt. of the defects, when the mobility of carriers is still considerable. The suppression of elec. activity of impurities in alloys is probably due to the fact that some atoms of the impurities penetrate the crystal defects and internodes and remain nonionized. (Author)