Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide

The authors have demonstrated a n-type GaAs depletion-mode metal-oxide-semiconductor field-effect Transistor with normalized transconductance gm of 266mS∕mm, peak electron mobility of 1124cm2V−1s−1, and low hysteresis. The good device characteristics are attributed to the use of amorphous silicon interface passivation layer and HfO2 gate dielectric. The pulse Id-Vg characteristics show that even higher channel mobility (>2000cm2V−1s−1) can be achieved by reducing the interfacial and bulk traps in the gate stack.