Microstructure and optoelectrical characteristics of silicon suboxide film and its application in silicon thin film solar cell

Silicon film alloying can adjust the bandgap and reflective index of silicon film, thus it is an important material for improving solar cell performance. Mixed-phase silicon suboxide film, with the properties of high conductivity, high bandgap, and low refractive index, has been widely used as the intrinsic and doped layers in p-i-n silicon thin film solar cell. In this paper, we review the microstructure, optical and electrical characteristics of silicon suboxide films, and also its role as the window layer, absorber layer, intermediate reflector, and back reflector in silicon thin film solar cell.