Process and Model of Short-Gate Diffused InGaAs JFET's for Integrated Pin - FET Photodetector

Junction Field Effect Transistors with a micron diffused gate have been fabricated on InGaAs/InP grown by molecular beam epitaxy (MBE). Transconductances higher than 200 mS/mm with a channel doping level of 2.10 16 cm ?3 have been measured. A compact model for PIN - FET photodetector has been developed to optimize e signal to noise ratio.