Old Web
English
Sign In
Acemap
>
Paper
>
Development of n-type doping technique for GaN by pulsed sputtering
Development of n-type doping technique for GaN by pulsed sputtering
2016
Kohei Ueno
Y. Arakawa
Hideyuki Imabeppu
Atsushi Kobayashi
Jitsuo Otha
Hiroshi Fujioka
Keywords:
Doping
Sputtering
Analytical chemistry
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]