The LPE Growth of HgCdTe Film on(211) CdZnTe Substrate

HgCdTe LPE technique on(211) CdZnTe substrate is studied to test the feasibility of CdTe/Si complex substrate applied in LPE technique.The defect density of the film surface is about 500/cm~(-2).The FWHM of the x-ray rocking curve is 24 arcsec.The EPD of the film is 2×10~5/cm~(-2).The surface morphology of the film is found to be quite different from that of the HgCdTe LPE film grown on(111) CdZnTe.