Physical Properties of (Pb,La)(Zr,Ti)O 3 Films Crystallized by One-Step Postdeposition Annealing Using Nucleus-Insertion Method

Physical properties of two PLZT films using a initial PLZT nucleus (i-PLZT) layer deposited by sputtering on the respective Pt(100)/MgO and Pt(111)/SiO 2 /Si(100) substrates were investigated. Postannealed PLZT films formed on Pt/MgO and Pt/SiO 2 /Si substrates showed preferential (001)- and (111)-orientation, respectively. The results of energy dispersive X-ray analysis suggest the possibility that a part of Zr moved from the seeding layer upward to crystallized layer, while a part of Ti moved from the crystallized layer downward to the seeding layer by the interdiffusion between the above two layers during postannealing.