A semiconductor device having coupled junction field effect transistors

The invention relates to a semiconductor device, comprising a first junction field effect transistor and a second JFET, each JFET a semiconductor body (116) of the one conductivity type of a source electrode (S1; S2) and a position spaced from the drain electrode (D) is contacted, so that between the source electrode and the drain electrode in the semiconductor body, a current path is formed and provided in the region of the current path in the semiconductor body regions (117, 139, 122; 140, 128, 124) of the other opposite to the one conductivity type conduction type of a gate electrode (G1; G2) are contacted and in the semiconductor body (116) constituting the flow path controlling space charge zones, wherein the drain electrode of the junction field-effect transistors are short-circuited, and the source electrode (S1) of the first field effect transistor with the gate electrode (G2) of the second locking Chic ht field effect transistor is shorted. Furthermore, it relates to a circuit arrangement having such a semiconductor device, comprising containing a of the potential of the source electrode (S2) of the second junction field-effect transistor controlled switching element (104) through which the gate electrode (G1) and the source electrode ( S1) can be connected to the first junction field effect transistor with a space charge zones increasing potential difference.