Wafer cleaning method capable of effectively reducing water mark defect

The invention discloses a wafer cleaning method capable of effectively reducing the water mark defect, used for wafer cleaning before the growth of epitaxial silicon or epitaxial germanium silicon, wherein the method comprises the following steps: step 1: cleaning a wafer with SC1 solution in a chemical tank I; step 2: cleaning off the residual SC1 solution on the surface of the wafer with deionized water in a chemical tank II; step 3: cleaning the wafer with SC2 solution in a chemical tank III; step 4: cleaning off the residual SC2 solution on the surface of the wafer with deionized water in a chemical tank VI; and step 5: in a chemical tank V, firstly treating the wafer with hydrofluoric acid, then cleaning off residual hydrofluoric acid on the surface of the wafer with deionized water in an overflowing mode, and finally drying the wafer. Through the wafer cleaning method capable of effectively reducing the water mark defect provided by the invention, the forming of the water mark defect can be avoided effectively when the wafer is put in solution after being taken out of the water solution and in the transferring process, and the technology process is simple and easy to control.