The influence of doposition conditions on the structrure of ZnTe/ZnTe:Cu thin films and the properties of CdTe cells

Polycrystalline film of ZnTe/ZnTe:Cu is fabricated by co-vaporization. The influence of evaporation temperature on the structue of the film and Cu distribution in the film and performance of the cell fabricated with the films are studied by XRD,XPS, C - V and I - V analysis. The results indicate that, （1） the deposition temeperature has less effecton the structure of the film ZnTe/ZnTe:Cu, （2） the fact that the Cu concentration in the film deposited at 100℃ raises to a maximum and descend rapidly shows the function of ZnTe film in preventing Cu atoms diffusing in the film and the CdTe cell fabricated with the film shows a wider barrier （ X D ）,smaller capacitance, better diode characteristic and larger conversion efficiency.