1mA/um-I ON strained SiGe 45% -IFQW pFETs with raised and embedded S/D

A 2 nd generation of Implant Free Quantum Well pFETs is presented in this work. SiGe 25% -embedded Source/Drain was implemented, leading to an excellent short channel control and logic performance (1mA/um-I ON @-1V). No narrow-width effect was found and a multi-VTH strategy is also offered. Performance of the strained-IFQW pFETs was finally demonstrated at lower V DD .