High mobility field effect transistor of SnOx on glass using HfOx gate oxide

Abstract We report on the electrical properties of SnO x thin films made by reactive sputtering of a Sn metal target and the performance of their field effect transistors with HfO x gate insulator on glass substrates. We investigated the electrical properties of SnO x films by controlling the oxygen partial pressure during growth. The mobility of the SnO x films on glass substrates was as high as 20.28 cm 2  V −1  s −1 after post-deposition annealing at 400 °C, while its carrier density was 4.21 × 10 18  cm −3 . Moreover, we fabricated high mobility thin film transistors using polycrystalline SnO x as the channel and the atomic-layer-deposited HfO x as the gate oxide. The field-effect mobility values were 5.01–20.15 cm 2  V −1  s −1 , the I on /I off were 10 3 ∼10 4 , and the subthreshold swing were 1.05–1.60 V dec −1 . We discuss the origins for the non-ideal performance and the future direction for improvement.