The mystery of the Z 2 -FET 1T-DRAM memory

Maryline Bawedin,H. El Dirani,Kyung Hwa Lee,Mukta Singh Parihar,J. Lacord,S. Martinie,C. Le Royer,J-Ch. Barbe,X. Mescot,Pascal Fonteneau,Ph. Galy,F. Gamiz,C. Navarro,Binjie Cheng,Asen Asenov,Yuan Taur,S. Cristoloveanu

The mystery of the Z 2 -FET 1T-DRAM memory

2017

Maryline Bawedin
H. El Dirani
Kyung Hwa Lee
Mukta Singh Parihar
J. Lacord
S. Martinie
C. Le Royer
J-Ch. Barbe
X. Mescot
Pascal Fonteneau
Ph. Galy
F. Gamiz
C. Navarro
Binjie Cheng
Asen Asenov
Yuan Taur
S. Cristoloveanu

We review the operation mechanisms of the Z 2 -FET underlining its attractiveness as a capacitorless DRAM memory. The main parameters that govern the memory performance are discussed based on systematic experiments and simulations.

Keywords:

Logic gate
Electronic engineering
Silicon on insulator
Dram
Engineering
random access memory
Electrical engineering
memory performance
dram memory
Modulation

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