Nano-scale Recessed Asymmetric Schottky Contacted CMOS

A new CMOS device architecture named as Recessed Asymmetric Schottky Contacted CMOS ( RASC-CMOS) has been proposed and simulated by using commercial version device simulator DESSIS 6.1. RASC-CMOS can eliminate the two critical drawbacks of conventional Schottky contacted CMOS (SC-CMOS): 1) unacceptable off-state current (>10 nA//spl mu/m), 2) strong short-channel effects when the feature size of SC-CMOS scaled down to 10 nm. In the meantime, RASC-CM0S has kept the advantage of with extremely simplified fabrication process of SC-CMOS.