Facile, scalable and transfer free vertical-MoS2 nanostructures grown on Au/SiO2 patterned electrode for photodetector application

Abstract Transition metal dichalcogenides such as molybdenum disulfide (MoS 2 ) have attracted considerable attention for use in optoelectronic devices. However, their large scale monolayer production seems to be limited due to scalability, layers size and fabrication process. While, a prominent photoluminescence was reported for vertically aligned MoS 2 (V-MoS 2 ) nanosheets similar to MoS 2 mono- and few- layer, as highly promising counterparts for development of optoelectronic devices. Here, we report a systematic method to fabricate V-MoS 2 nanosheets using a chemical vapor deposition (CVD) technique. The growing density and morphology of V-MoS 2 nanosheets are controlled by adjusting growth parameters. The V-MoS 2 nanosheets form in 2H phase and have thickness of ∼10–80 nm and the lateral dimension of 1–2.5  μ m . Furthermore, a photodetector platform is fabricated based on V-MoS 2 nanosheets with considerable performance and transfer free process with scalable manufacturing ability. The V-MoS 2 nanosheets are directly deposited on and within patterned gold leads made on SiO 2 substrate to immediately form arrays of photodetector. Optical and electrical response of such a photodetector is examined at different wavelengths and light powers. Such a facile fabrication can convey to a straightforward approach for large scale and transfer free implementing V-MoS 2 nanosheets in optoelectronic elements.