Characterization of C-N thin films prepared by ion beam sputtering
2009
C-N thin films have been prepared by ion beam sputtering using pure N-2 as discharge gas. The ratio N/C of the films measured by Auger spectrum is 20% on an average. The results of X-ray diffraction and transmission electron microscopy show that beta-C3N4. phase exists in the films. X-ray photoelectron spectroscopy shows that nitrogen is mostly combined with carbon with triple (C=N) and double (C=N) bonds. The IR absorption shows an absorption bond near 2185 cm(-1) assigned to the C=N, no trace of C-C bond was observed.
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