Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation

Abstract Spreading resistance and temperature dependent Van der Pauw measurements provide evidence of the non-homogeneity of resistivity, electron mobility and scattering mechanism in silicon on insulator films obtained by oxygen implantation. The oxygen content of this material is also responsible for substantial thermal donor activity. Original results on MOS transistors, the channels of which are situated either at the front interface or near the buried oxide, illustrate the dissymmetry between these interfaces.