Electronic Raman Scattering in Twistronic Few-Layer Graphene.

We study electronic contribution to the Raman scattering of two- to four-layer graphene with the top layer twisted by a small angle, $\theta<2^{\circ}$, relatively to the 2D crystal underneath. We find that the Raman spectrum features two peaks produced by van Hove singularities in moire minibands characteristic for twistronic graphene, one related to direct hybridization of Dirac states, and the other resulting from band folding caused by moire superlattice. The positions of both peaks strongly depend on the twist angle, so that their detection can be used for non-invasive measurements of twist angle, even in the hBN-encapsulated structures.