A review of the foundation technologies of nano-electronics

In this paper we discuss the foundation technologies that have kindled and are reinforcing the shift of microelectronics to nanoelectronics. Nano electronics is the science which deals with the electronic components manufactured and engineered at a molecular scale. Today's electronics world is dominated by the micro-level silicon based technology which follows the famous Moore's law. Further miniaturization is hindered by certain physical, thermal and manufacturing problems. The paper discusses about combating these problems with various nano materials, new device architectures and using them onto the CMOS circuitry. Carbon nanotube (CNT), graphene Nano ribbon (GNR), Semiconducting Nanowire (S-NW) and molecular electronic devices are the potential materials which can modify the pre-existing silicon based technology. Miniaturization of FETs to the nano-level is accompanied by leakage current and power losses, fully depleted tri-gate transistors provide a promising solution. Studies have proved that electrical, thermal, mechanical, physical and chemical properties of nano-materials are superior to silicon. Graphene shows excellent electrical and thermal properties, major research being pursued to exploit these properties by employing graphene in electronics world. This nano-circuitry can find its use in digital circuits, display applications, TFTs, printed electronics, high precision sensors, radio frequency (RF) signal processing and flexible electronics. The paper also discusses various limitations in manufacturing of these nanomaterials at a large scale to launch them in the commercial market. There are certain demerits of the aforementioned nano-materials which stand as challenges to be tackled. The major obstacles are fabrication of such nano-sized FETs, nano-wires and placing them onto the CMOS circuitry with ultra-high precision, high values of yield and a production rate so as to meet the unprecedented demand of these components in the market.