Magnetostriction Nanostructures with a Giant Magnetoresistive Effect for Magnetic Straintronics Devices

The results are presented from experimental studies of the magnetostrictive and magnetoresistive properties of a multilayer Ta/FeNiCo/CoFe/Cu/CoFe/FeNiCo/FeMn/Ta nanostructure formed on an oxidized silicon substrate. The effect mechanical deformation has on the electrophysical parameters of the nanostructure is investigated. Conclusions and prospects for using magnetoresistive nanostructures with a magnetostrictive effect in elements of magnetic straintronics are formulated.