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MBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers
MBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers
2011
Y. Shimura
Marika Nakamura
Takanori Asano
Takeuchi S
Osamu Nakatsuka
Vincent Benjamin
Gencarelli Federica
Clarysse Trudo
Vandervorst Wilfried
Caymax Matty
Loo Roger
Shigeaki Zaima
Jla
Keywords:
Crystallography
Crystal
Materials science
Optoelectronics
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