A study of high-temperature implantation of 72 keV copper ions into nickel

Abstract The depth profiles of 72 keV Cu ions (5 × 10 15 Cu −1  ions/cm 2 ) implanted into Ni at elevated temperatures (200, 400 and 500 °C) are investigated theoretically and experimentally. A tandem accelerator was used for implantation and the depth profiles were measured by SIMS. The theoretical depth profiles were calculated by a kinetic model which takes into account ion collection, lattice dilation, preferential sputtering, radiation-enhanced diffusion (RED) and radiation-induced segregation (RIS). The results demonstrated that our theoretical predictions are in good agreement qualitatively with measured ones, and the implantation temperatures have a significant effect on the final depth profiles of implanted ions. The effect is mainly due to RED and RIS, which are attributed to the point defects generated during ion implantation.