A cross-sectional tem study of MOVPE grown CdHgTe

Abstract MOVPE CdHgTe (CMT) grown on (001) CdTe by the interdiffusion multilayer process (IMP) has been examined by cross- sectional transmission electron microscopy. The dislocation network between epilayer and substrate is narrower than for LPE and the epilayer retains no traces of the IMP structure. Low, crystallographic facets on the top surface of the CMT do not have below them any obvious defects in the epilayer. The taller, more irregular features hide a conical twinned volume originating from a point on the substrate surface. A specially prepared MOVPE double layer of HgTe and CdTe shows a puzzling difference in dislocation density between CdTe/HgTe and HgTe/CdTe interfaces.