FIB-CVD technology for EUV mask repair
2010
In this paper, we will report on the cleaning process durability and light shielding capability of FIB- and EB-CVD
(Chemical Vapor Deposition) films which, are applied to repair clear defects on EUV mask. We evaluated tungsten
containing, and silicon containing precursors in addition to carbon based precursor. For the conventional photomasks, the
carbon based precursor is applied for repairing the clear defects because the reconstructed patterns by the carbon based
precursor have excellent printability. However, under the condition of EUV lithography, the optical property of carbon
deposited film is quite different.
From the stand point of beam, FIB-CVD films showed better cleaning process durability and light shielding capability
than EB-CVD film did. These differences are attributed to chemical components of the CVD films, especially with the
tungsten based FIB-CVD film that contains 44 atomic % of tungsten and 24 atomic % of gallium. The tungsten based
FIB-CVD film showed no loss of film thickness after dry cleaning, and the calculation showed that 56nmt was sufficient
for repairing clear defects on EUV mask with 51nmt of absorber layer. On the other hand, carbon based FIB-CVD film
suffered considerable loss in the film thickness and needed more than 180nm.
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