Effects of PZT-Electrode Interface Layers on Capacitor Properties

In order to study effects of interfacial layers between films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt//Si structure. interfacial layers were formed by sol-gel deposition and PbO, ZrO, and thin layers were deposited by reactive sputtering. interface layers result in the finest grains of PZT(crystalline Temp. ) films compare to layers. However, as the thickness of layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.