Single-crystalline silicon solar cell with pp+ heterojunction of c-Si substrate and μc-Si : H film

Abstract Annealing effects of the single-crystalline silicon solar cells with hydrogenated microcrystaline silicon (μc-Si : H) film were studied to improve the conversion efficiency. Boron-doped (p + ) μc-Si : H film was deposited in a RF plasma enhanced chemical vapor deposition system (RF plasma CVD) on the rear surface of the cell. With the optimized annealing conditions for the substrate, the conversion efficiency of 21.4% (AM1.5, 25°C, 100 mW/cm 2 ) was obtained for 5 × 5 cm 2 area single crystalline-solar cell.