Metal - low pressure deposition of ruthenium and rhenium metal layer from carbonyl precursor

A metal - is to provide a low-pressure deposition of ruthenium and rhenium metal layer from carbonyl precursor. A high deposition rate of the patterned substrate, low particulate contamination, and a method of depositing a Ru and Re metal layer on a substrate having a good step coverage is shown. The method includes providing a substrate in a processing chamber, a carrier gas, a ruthenium - comprises introducing a process gas containing a metal precursor selected from the group consisting of carbonyl precursor to the process chamber - carbonyl precursor and rhenium . The method further comprises depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr. BACKGROUND OF THE INVENTION