Temperature dependent electrical characteristics of through-si-via (TSV) interconnections

In this paper, we investigate the electrical behavior of TSV with increasing temperatures (25–150°C). TSV capacitance, leakage current and TSV resistance with varying temperatures are reported. TSV C-V characteristics are analyzed to extract the oxide charges. It is confirmed that the depletion behavior of TSV can be exploited to reduce TSV capacitance even at higher temperatures. In addition, lumped RC model of the TSV for circuit simulations is enhanced by incorporating measured TSV resistance and capacitance change due to temperature. The results are corroborated with the 2D/3D Ring Oscillator (RO) measurements at different temperatures.