Simulation method of the bidirectional switch, the simulation of the bidirectional switching device, and program

It provides a method of simulating the electrical characteristics of the bidirectional switch composed of a single element of the double gate structure. Performing a JFET (351) a drain electrode (471) of the JFET drain electrode (472) of (352) is connected via a resistor (36), the simulation using the equivalent circuit (1000) of symmetrical structure .