Interaction of polymeric Si:C:H films with copper substrates and with deposited Cu adatoms

Abstract Polymeric Si:C:H films stable to 800 K in UHV, were formed on Cu or Ta substrates by electron bombardment. Vinyltrimethylsilane (VTMS) vapor was condensed onto a cold ( 3 VV) Auger spectra indicate that sputter-deposited Cu interacts weakly with the polymeric film, displaying no charge transfer between Cu and substrate film, and growth by three-dimensional island formation. Upon annealing above 300 K, the Cu(2p 3/2 )/Si(2p) XPS intensity ratio decreases, but the Cu(2p 3/2 )/Cu(3p) intensity ratio remains constant. This indicates that annealing above 300 K induces Cu agglomeration and negligible Cu diffusion into the substrate.