Giant electrical control of magnetic anisotropy in magnetoelectric heterostructures using (011) PMN-PT single crystal

We report giant electrical control of magnetic anisotropy in a magnetoelectric polycrystalline Ni thin film and (011)-oriented [Pb(Mg 1/3 Nb 2/3 )O 3 ] (1-x) -[PbTiO 3 ]x (PMN-PT) heterostructure. The (011) PMN-PT ferroelectric substrate exhibits both linear anisotropic piezoelectric response and unique giant hysteretic response. These important features can significantly tune the magnetization states via strain coupling. Reversible and permanent magnetization reorientation demonstrates an approach for developing magnetoelectric memory devices.