Epitaxial growth of an Sm2O3 buffer layer for EuBa2Cu3O7−δ thin films by magnetron sputtering

Abstract Fabrication of EBCO thin films with a high critical current density ( J c ) on an Sm 2 O 3 buffer layer was carried out. The J c values were influenced by surface roughness ( R z ) of Sm 2 O 3 and EBCO films. To reduce R z of Sm 2 O 3 buffer layers, the effect of target–substrate distance ( D off ) on surface morphology was examined. The critical temperature ( T ce ) was always almost 90 K regardless of D off in the Sm 2 O 3 buffer layer deposition. The J c values of EBCO thin films deposited on Sm 2 O 3 buffer layers with a smooth surface were 6.4 MA/cm 2 at 77.3 K.