Illumination optics for EUV microlithography and illumination system and projection exposure system with an illumination optics

An illumination optics for EUV microlithography serves to guide an illumination light beam from a radiation source towards an object field with a Ausdehnungsverhatnis between a larger array dimension (x) and a smaller array dimension (y), which is significantly larger (than 1. A field facet mirror 13 ) has a plurality of field facets (19) for setting a defined illumination conditions in the object field. A field facet mirror (13) following subsequent optical system serves to convert the illumination light in the object field (5). The subsequent optical system has a pupil facet mirror (14) having a plurality of pupil facets (27). The field facets (19) are assigned to the pupil facets (27) individually, so that portions of the illumination light beam (10) which impinge on each one of the field facets (19), then via the associated pupil (27) to the object field (5) be performed. Has the field facet mirror (13) next to a plurality of basic illumination field facets (19 The result is a lighting optical system in which a correction of unwanted variations of illumination parameters, such as a ...