Effect of bus-bar material and configuration on the efficiency of GaInP/GaAs/Ge solar cells

The effect of bus-bar material and configuration was investigated for multi-junction solar cells (SC) based on GaInP/GaAs/Ge structure. Different configurations of contact busbars were obtained by the electro-chemical deposition of Ag and Au materials. The resistivity of contact bus-bars of gold and silver were measured. It is established that the bus-bars configuration in a form of truncated pyramids of 3-10 μm wide and of 4-8 μm thick located with a spacing less than 100 pm allows to reduce optical and ohmic losses and to increase the efficiency of SCs.