Magnetic-field dependences of the conductivity and hall factor in MBE-grown CdXHg1−X Te layers

Dependences of conductivity and the Hall factor on magnetic field in CdXHg1−XTe (mercury cadmium telluride, MCT) have been studied at 77 K. Films of n-type conduction with X=0.21–0.23 were grown on (013) GaAs substrates by MBE. As the magnetic field increases from 0 to 1 T, conductivity and the Hall factor decrease by a factor of 3–5. These dependences are well described in terms of a two-layer model with high and low mobility of electrons in the layers. The analysis of data obtained with layer-by-layer etching has shown that an MCT film can be described as a two-layer structure. In this case, a thin layer with high density and low mobility of electrons is located near the interface with a CdTe buffer. A high density and low mobility of electrons can be attributed to the high defectiveness of this layer. Studies by transmission electron microscopy have demonstrated the presence of a network of dislocations in MCT film near the interface with the buffer layer.