Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy

Sn doping of β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during MBE growth was investigated. Sn doping of (010) β-Ga2O3 via MOCATAXY allowed for sharper doping profiles as well as a wider range of donor concentrations from 4 x 10^16 cm-3 to 2 x 10^19 cm-3 with a maximum Hall mobility of 136 cm2/Vs and a Sn donor level of 77 meV below the conduction band. Expansion of MOCATAXY to (001) β-Ga2O3 also showed improved Hall mobility, growth rates, and smoother films in this orientation.