Effect of temperature on internal parameters of solar cell

Abstract The performance of solar PhotoVoltaic (PV) cell is varied with the effect of internal and external parameters. In this, internal parameters like photogenerated current, reverse saturation current; series resistance, shunt resistance, and ideality factor are main causes for developing hot spot and mismatch effect in a PV cell. In this paper, reverse saturation current, ideality factor and shunt resistance are considered for analysis of different PV cell materials like monocrystalline (m-Si), polycrystalline (p-Si), gallium arsenide (GaAs), cadmium telluride (CdTe), and amorphous silicon (a-Si). The changes in internal parameters with comparison and temperature effect from 293 K to 323 K are considered to plot the performance curve. This result shows that ideality factor and reverse saturation current are controls the voltage level in PV cell. Among these effect GaAs and a-Si having the major and minor deviation in their performance as compared with other PV cell materials.