Chemically amplified negative-tone photoresist for sub-half-micron device and mask fabrication

In this paper we discuss a new alkaline soluble negative acting photoresist which incorporates a phenolic based resin, urea/formaldehyde prepolymer as a crosslinking agent and an organic acid-generating sensitizer. This system, dubbed 'EBX' (Electron Beam/X-ray) resist has demonstrated excellent lithographic properties in various exposure modes. Discussion will center on imaging characteristics in the deep and mid ultraviolet using Micrascan I and I-line (365 nm) steppers; electron-beam imaging with MEBES 10 kV mask maker and IBM's EL-4 50 kV electron beam exposure system; and XRAY imaging with point source soft x-ray and synchotron hard x-ray lithography.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.