Effect of electric field in the course of obtaining a -SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions

The effect of electric field on the elemental composition and photoluminescence of films of amorphous hydrogenated silicon doped with erbium and oxygen (a-SiO x :H(Er, O)) in the course of obtaining these films by dc magnetron sputtering is studied. Two series of films were studied in relation to the electric-field strength in the magnetron, the area of the metallic erbium target, and oxygen content in the working chamber. The first series of films was obtained using an electrically insulated substrate holder, and the second series was obtained with a positive potential at the substrate holder with respect to the cathode. It is shown that, although the character of variation in the elemental composition and photoluminescence intensity for erbium Er3+ ions differ appreciably in the films of the two series, both of these factors are determined, as a result, by the processes of sputtering oxidation of the Si and Er targets that represent the cathode.