200 mm wafer-scale substrate transfer of 0.13μmCu∕low-k (Black Diamond™) dual-damascene interconnection to glass substrates

We report a low-temperature (350 °C) pulsed-voltage anodic bonding followed by grind/etch-back method for 200 mm wafer-scale substrate transfer of 0.13μmCu∕low-k (Black Diamond™) dual-damascene interconnection to glass substrates. Standard back-end-of-line (BEOL) 3kASiN∕3kA undoped Si glass passivating films were used as buffer layers between donor wafer and glass wafer to facilitate the bonding. We demonstrate removal of the silicon bulk layer to leave behind a transparent (∼1.25μm thick) 0.13μm BEOL circuit on a 1-mm-thick glass wafer. The quality of the mechanical and electrical integrity of the deep submicron BEOL circuit is confirmed by focused ion beam-scanning electron microscopy microscopy and I-V characterization on via chain test structures. This technique has potential applications for bioelectronics and optoelectronics integration schemes.