In-situ analyses on the reactive sputtering process to deposit Al-doped ZnO films using an Al–Zn alloy target

Abstract The kinetic energies of generated ions were investigated during the reactive sputtering process to deposit Al-doped ZnO (AZO) films using an Al–Zn alloy target. The sputtering system was equipped with specially designed double feedback system to stabilise the reactive sputtering processes and analysis was performed with a quadrupole mass spectrometer combined with an energy analyser. Negative ions O − , O 2 − , AlO − and AlO 2 − with high kinetic energies corresponding to cathode voltage are generated at the partially oxidised target surface, after which some of the ions undergo subsequent charge exchange and/or dissociation. Positive ions O + , Ar + , Zn + and Al + with lower kinetic energies (around 10 eV) are generated by charge exchange of sputtered neutral O, Ar, Zn and Al atoms, respectively. As the target surface oxidises, cathode voltage decrease, the flux of high-energy negative ions increases and the electrical properties of the AZO degrade by ion bombardment as well as the AZO films that are deposited by conventional magnetron sputtering using an AZO target.