Element of nonvolatile memory

A nonvolatile memory element comprising a selection transistor of the element (2) and a capacitor (1) for recording a binary value by breakdown of an insulating layer (13) of the capacitor . A structure of the memory element is changed to allow a higher degree of integration of the element in a MOS type electronic circuit. In addition, the memory element is made more robust with respect to a high voltage (VDD) used for recording the binary value.